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STTH302S Datenblatt(PDF) 1 Page - STMicroelectronics |
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STTH302S Datenblatt(HTML) 1 Page - STMicroelectronics |
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1 / 5 page ![]() 1/5 STTH302S April 2002 - Ed: 1A HIGH EFFICIENCY ULTRAFAST DIODE ® The STTH302S, which is using ST’s new 200V planar technology, is specially suited for switching mode base drive & transistor circuits. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications. DESCRIPTION s Very low conduction losses s Negligible switching losses s Low forward and reverse recovery times s High junction temperature FEATURES AND BENEFITS Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 200 V IF(AV) Average forward current Tl = 107°C δ =0.5 3 A IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 100 A Tstg Storage temperature range - 65 + 175 °C Tj Maximum operating junction temperature 175 °C ABSOLUTE RATINGS (limiting values) IF(AV) 3A VRRM 200 V Tj (max) 175 °C VF (max) 0.75 V trr (max) 35 ns MAIN PRODUCT CHARACTERISTICS SMC Symbol Parameter Maximum Unit Rth (j-l) Junction to lead 20 °C/W THERMAL PARAMETERS |
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