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BUT70W Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer BUT70W
Bauteilbeschribung  isc Silicon NPN Power Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUT70W Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

  BUT70W Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUT70W Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2023-2-1
1
isc Silicon NPN Power Transistor
BUT70W
DESCRIPTION
·
High Current Capability
·
Very Low Saturation Voltage and High Gain
·
Fast Switching Speed
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for switching regulation、motor control and
High frequency and efficiency converters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEO
Collector-Emitter Voltage
125
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current- Continuous
40
A
ICM
Collector Current-Peak
120
A
IB
Base Current- Continuous
8
A
IBM
Base Current-Peak
24
A
PC
Collector Power Dissipation
@ TC=25℃
200
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.63
℃
/W


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