SS8050 datasheet(1/4 Pages) WEITRON

Teilenummer	SS8050

Bauteilbeschribung	NPN General Purpose Transistors

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SS8050

NPN General Purpose Transistors

TO-92

1

2

3

1. EMITTER

2. BASE

3. COLLECTOR

ELECTRICAL CHARACTERISTICS (TA=25˚C unless otherwise noted)

Characteristics

Symbol

Unit

Min

Typ

Max

Collector cut-oﬀ current

Emitter cut-oﬀ current

VCE=20V, IE=0

VCB=40V, IE=0

Emitter cut-oﬀ current

VEB=5V, IC=0

ICBO

ICEO

IEBO

-

µA

0.1

-

µA

0.1

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

IC=0.1mA, IB=0

IC=100µA, IE=0

Emitter Base Breakdown Voltage

IE=100µA, IC=0

V(BR)CBO

V(BR)CEO

40

25

V

-

V(BR)EBO

5

-

V

-

MAXIMUM RATINGS(TA=25˚C unless otherwise noted)

Junction and Storage, Temperature

TJ,Tstg

-55 to +150

°C

Collector Current-Continuous

IC

1.5

A

Total Device Dissipation TA=25°C

PD

1.0

W

Emitter-Base Voltage

VEBO

5

V

Collector-Emitter Voltage

VCEO

25

V

Collector-Base Voltage

Rating

Symbol

Value

Unit

VCBO

40

V

1/4

19-Jul-05

Lead(Pb)-Free

P b

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