| Datenblatt-Suchmaschine für elektronische Bauteile |
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PSDH175 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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PSDH175 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() isc website: www.iscsemi.com isc & iscsemi is registered trademark 2 PSDH175 Three Phase Half Controlled Bridges SYMBOL CONDITIONS Max UNIT I2t TVJ=45℃ VR=0 10ms,(50Hz),sine 11.2 A2S*103 8.3ms,(50Hz),sine 10.75 A2S*103 TVJ=TVJM VR=0 10ms,(50Hz),sine 9.1 A2S*103 8.3ms,(50Hz),sine 8.83 A2S*103 PGM PGAVM TVJ=TVJM TP=30us IT=ITAVM TP=500us ≤ 10 ≤ 5 0.5 W W W VRGM 10 V TJ -40~125 ℃ Tstg -40~125 ℃ Viso 50/60Hz,R.M.S,t=1min,Iiso:1mA(max) 3000 V THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.46 ℃ /W ELECTRICAL CHARACTERISTICS SYMBOL CONDITIONS MAX UNIT ID IR TVJ=TVJM,VR=VRRM,VD=VDRM,IT=200A,TVJ=25℃ 5 mA TV IT=200A,TVJ=25℃ 1.57 V VGT VD=6V,TVJ=25℃ 1.5 V IGT VD=6V,TVJ=25℃ 100 mA |
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