STRT71XF datasheet(45/74 Pages) STMICROELECTRONICS

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STR71xF

Electrical parameters

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2.3.3

Memory characteristics

Flash Memory

V33 = 3.0 to 3.6V, TA = -40 to 85 °C unless otherwise specified.

Notes:

TA=85°C after 0 cycles. Guaranteed by characterization, not tested in production.

Guaranteed by design, not tested in production

2.3.4

EMC characteristics

Susceptibility tests are performed on a sample basis during product characterization.

Table 23.

Flash memory characteristics

Symbol

Parameter

Test Conditions

Value

Unit

Min.

Typ

Max1)

tPW

Word Program

µs

tPDW

Double Word Program

µs

tPB0

Bank 0 Program (256K)

Double Word Program

1.6

2.1

tPB1

Bank 1 Program (16K)

Double Word Program

130

170

tES

Sector Erase (64K)

Not preprogrammed

Preprogrammed

2.3

1.9

4.0

3.3

tES

Sector Erase (8K)

Not preprogrammed

Preprogrammed

0.7

0.6

1.1

1.0

tES

Bank 0 Erase (256K)

Not preprogrammed

Preprogrammed

8.0

6.6

13.7

11.2

tES

Bank 1 Erase (16K)

Not preprogrammed

Preprogrammed

0.9

0.8

1.5

1.3

tRPD

Recovery when disabled

µs

tPSL

Program Suspend Latency

µs

tESL

Erase Suspend Latency

300

µs

NEND_B0

Endurance (Bank 0

sectors)

kcycles

NEND_B1

Endurance (Bank 1

sectors)

100

kcycles

tRET

Data Retention (Bank 0

and Bank 1)

TA=55°

Years

tESR

Erase Suspend Rate

Min time from Erase

Resume to next Erase

Suspend

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