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M68AW511AM55MC6T Datenblatt(PDF) 13 Page - STMicroelectronics

Teilenummer M68AW511AM55MC6T
Bauteilbeschribung  4 Mbit (512K x8) 3.0V Asynchronous SRAM
PDF  21 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M68AW511AM55MC6T Datenblatt(HTML) 13 Page - STMicroelectronics

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M68AW511A
Table 7. Read and Standby Mode AC Characteristics
Note: 1. Test conditions assume transition timing reference level = 0.3VCC or 0.7VCC.
2. At any given temperature and voltage condition, tEHQZ is less than tELQX and tGHQZ is less than tGLQX for any given device.
3. These parameters are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output
voltage levels.
Symbol
Parameter
M68AW511A
Unit
55
70
tAVAV
Read Cycle Time
Min
55
70
ns
tAVQV
Address Valid to Output Valid
Max
55
70
ns
tAXQX
(1)
Data hold from Address change
Min
5
5
ns
tEHQZ
(2,3)
Chip Enable High to Output Hi-Z
Max
20
25
ns
tELQV
Chip Enable Low to Output Valid
Max
55
70
ns
tELQX
(1)
Chip Enable Low to Output Transition
Min
5
5
ns
tGHQZ
(2,3)
Output Enable High to Output Hi-Z
Max
20
25
ns
tGLQV
Output Enable Low to Output Valid
Max
25
35
ns
tGLQX
(1)
Output Enable Low to Output Transition
Min
5
5
ns
tPD
Chip Enable High to Power Down
Max
55
70
ns
tPU
Chip Enable Low to Power Up
Min
0
0
ns



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