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MM74HC623 Datenblatt(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Teilenummer MM74HC623
Bauteilbeschribung  Octal TRI-STATE Transceiver
PDF  4 Pages
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Hersteller  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

MM74HC623 Datenblatt(HTML) 2 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Notes12)
If MilitaryAerospace specified devices are required
please contact the National Semiconductor Sales
OfficeDistributors for availability and specifications
Supply Voltage (VCC)
b
05V to a70V
DC Input Voltage DIR and G pins (VIN) b15V to VCC a15V
DC Output Voltage (VIN VOUT)
b
05 to VCC a05V
Clamp Diode Current (ICD)
g
20 mA
DC Output Current per pin (IOUT)
g
35 mA
DC VCC or GND Current per pin (ICC)
g
70 mA
Storage Temperature Range (TSTG)
b
65 Cto a150 C
Power Dissipation (PD)
(Note 3)
600 mW
SO Package only
500 mW
Lead Temperature (TL)
(Soldering 10 seconds)
260 C
Operating Conditions
Min
Max
Units
Supply Voltage (VCC)2
6
V
DC Input or Output Voltage
(VIN VOUT)0
VCC
V
Operating Temp Range (TA)
MM74HC
b
40
a
85
C
MM54HC
b
55
a
125
C
Input RiseFall Times
(tr tf)VCCe20V
1000
ns
VCCe45V
500
ns
VCCe60V
400
ns
DC Electrical Characteristics (Note 4)
TA e 25 C
74HC
54HC
Symbol
Parameter
Conditions
VCC
TA eb40 Cto a85 CTA eb55 Cto a125 C Units
Typ
Guaranteed Limits
VIH
Minimum High Level
20V
15
15
15
V
Input Voltage
45V
315
315
315
V
60V
42
42
42
V
VIL
Maximum Low Level
20V
05
05
05
V
Input Voltage
45V
135
135
135
V
60V
18
18
18
V
VOH
Minimum High Level
VINeVIH or VIL
Output Voltage
lIOUTls20 mA
20V
20
19
19
19
V
45V
45
44
44
44
V
60V
60
59
59
59
V
VINeVIH or VIL
lIOUTls60 mA
45V
42
398
384
37
V
lIOUTls78 mA
60V
57
548
534
52
V
VOL
Maximum Low Level
VINeVIH or VIL
Output Voltage
lIOUTls20 mA
20V
0
01
01
01
V
45V
0
01
01
01
V
60V
0
01
01
01
V
VINeVIH or VIL
lIOUTls60 mA
45V
02
026
033
04
V
lIOUTls78 mA
60V
02
026
033
04
V
IIN
Input Leakage
VINeVCC or GND
60V
g
01
g
10
g
10
m
A
Current (G and DIR)
IOZ
Maximum TRI-STATE VOUTeVCC or GND
60V
g
05
g
50
g
10
m
A
Output Leakage
Enable GeVIH
Current
ICC
Maximum Quiescent
VINeVCC or GND
60V
80
80
160
m
A
Supply Current
IOUTe0 mA
Note 1
Maximum Ratings are those values beyond which damage to the device may occur
Note 2
Unless otherwise specified all voltages are referenced to ground
Note 3
Power dissipation temperature deratingplastic ‘‘N’’ package b12 mW C from 65 Cto85 C ceramic ‘‘J’’ package b12 mW C from 100 Cto125 C
Note 4
For a power supply of 5V g10% the worst case output voltages (VOH and VOL) occur for HC at 45V Thus the 45V values should be used when designing
with this supply Worst case VIH and VIL occur at VCC e 55V and 45V respectively (The VIH value at 55V is 385V) The worst case leakage current (IIN ICC and
IOZ) occur for CMOS at the higher voltage and so the 60V values should be used
VIL limits are currently tested at 20% of VCC The above VIL specification (30% of VCC) will be implemented no later than Q1 CY’89
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