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3DA100 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer 3DA100
Bauteilbeschribung  isc Silicon NPN Power Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

3DA100 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
3DA100
DESCRIPTION
·
High DC Current Gain
: hFE= 10(MAX)@IC= 1.5A
·
Excellent Safe Operating Area
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for use as an output device in complementary
audio amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
2
V
IC
Collector Current-Continuous
5.0
A
PC
Collector Power Dissipation@TC=75℃
40
W
TJ
Junction Temperature
175
℃
Tstg
Storage Temperature Range
-55-175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
2.6
℃
/W


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