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SD6701ASCTR Datenblatt(PDF) 3 Page - Silan Microelectronics Joint-stock |
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SD6701ASCTR Datenblatt(HTML) 3 Page - Silan Microelectronics Joint-stock |
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3 / 8 page ![]() Silan Microelectronics SD670XSC_Datasheet ELECTRICAL CHARACTERISTICS (Unless otherwise stated, V CC=12V,Tamb=25°C) Characteristics Symbol Test condition Min. Typ. Max. Unit VCC clamp voltage VCCCLAMP IVCC>2mA 14 16 17 V UVLO VH UVLOH 10.5 12 13.5 V UVLO VL UVLOL 6.5 7.5 8.5 V Start-up current ISTART VCC=10V 50 95 125 μA Operating current IVCC CS=1V 100 150 200 μA Protection current IPRO CS=5V 800 1200 2000 μA CC parameters CS reference voltage CSREF 388 400 412 mV CS current limit reference voltage CSPEAK 420 450 480 mV Time Parameters Max. on time TON,MAX 40 50 60 μs LEB TLEB 0.45 0.6 0.75 μs Max. off time TOFF,MAX 180 220 260 μs Min. off time TOFF,MIN 2 3 4 μs Min. period TMIN 3.7 5 6.3 μs Internal OVP control TOVP 3.6 4.5 5.4 μs ROVP voltage VROVP 2 2.4 2.8 V Internal high voltage MOSFET On resistance SD6701ASC RDSON VGS=12V,ID=0.1A -- 13 14.5 Ω SD6701SC -- 7.5 8.6 SD6702SC -- 5 5.7 withstand voltage at Drain SD6701ASC BVDSS VGS=0V,ID=50uA 500 550 -- V SD6701SC 500 550 -- SD6702SC 500 550 -- Zero gate voltage drain current SD6701ASC IDSS VDS=500V, VGS=0V -- -- 1.0 μA SD6701SC -- -- 1.0 SD6702SC -- -- 1.0 Gate-Source Leakage Current SD6701ASC IGSS VGS=±30V, VDS=0V -- -- ±100 nA SD6701SC -- -- ±100 SD6702SC -- -- ±100 Temperature characteristics Regulatory temperature threshold value TREG 125 140 155 °C Over temperature protection threshold value TSD 135 150 165 °C Over temperature protection release point TRECOVERY 115 130 145 °C HANGZHOU SILAN MICROELECTRONICS CO.,LTD Rev.:1.2 http: //www.silan.com.cn Page 3 of 8 |
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