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SD6701ASCTR Datenblatt(PDF) 3 Page - Silan Microelectronics Joint-stock

Teilenummer SD6701ASCTR
Bauteilbeschribung  NON-ISOLATED BUCK LED LIGHTING DRIVE IC WITH LOW POWER AND HIGH CONSTANT CURRENT ACCURACY
PDF  8 Pages
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Hersteller  SILAN [Silan Microelectronics Joint-stock]
Direct Link  http://www.silan.com.cn
Logo SILAN - Silan Microelectronics Joint-stock

SD6701ASCTR Datenblatt(HTML) 3 Page - Silan Microelectronics Joint-stock

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Silan
Microelectronics
SD670XSC_Datasheet
ELECTRICAL CHARACTERISTICS (Unless otherwise stated, V
CC=12V,Tamb=25°C)
Characteristics
Symbol
Test condition
Min.
Typ.
Max.
Unit
VCC clamp voltage
VCCCLAMP
IVCC>2mA
14
16
17
V
UVLO VH
UVLOH
10.5
12
13.5
V
UVLO VL
UVLOL
6.5
7.5
8.5
V
Start-up current
ISTART
VCC=10V
50
95
125
μA
Operating current
IVCC
CS=1V
100
150
200
μA
Protection current
IPRO
CS=5V
800
1200
2000
μA
CC parameters
CS reference voltage
CSREF
388
400
412
mV
CS current limit reference voltage
CSPEAK
420
450
480
mV
Time Parameters
Max. on time
TON,MAX
40
50
60
μs
LEB
TLEB
0.45
0.6
0.75
μs
Max. off time
TOFF,MAX
180
220
260
μs
Min. off time
TOFF,MIN
2
3
4
μs
Min. period
TMIN
3.7
5
6.3
μs
Internal OVP control
TOVP
3.6
4.5
5.4
μs
ROVP voltage
VROVP
2
2.4
2.8
V
Internal high voltage MOSFET
On resistance
SD6701ASC
RDSON
VGS=12V,ID=0.1A
--
13
14.5
Ω
SD6701SC
--
7.5
8.6
SD6702SC
--
5
5.7
withstand voltage at Drain
SD6701ASC
BVDSS
VGS=0V,ID=50uA
500
550
--
V
SD6701SC
500
550
--
SD6702SC
500
550
--
Zero gate voltage drain
current
SD6701ASC
IDSS
VDS=500V,
VGS=0V
--
--
1.0
μA
SD6701SC
--
--
1.0
SD6702SC
--
--
1.0
Gate-Source
Leakage
Current
SD6701ASC
IGSS
VGS=±30V,
VDS=0V
--
--
±100
nA
SD6701SC
--
--
±100
SD6702SC
--
--
±100
Temperature characteristics
Regulatory temperature threshold value
TREG
125
140
155
°C
Over temperature protection threshold
value
TSD
135
150
165
°C
Over temperature protection release point
TRECOVERY
115
130
145
°C
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Rev.:1.2
http: //www.silan.com.cn
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