Nexperia

BAS21SW

High-voltage switching diode

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

VR

reverse voltage

-

250

V

IF

forward current

[1]

-

225

mA

tp = 1 µs; square wave; Tj(init) = 25 °C

-

9

A

tp = 100 µs; square wave; Tj(init) = 25 °C

-

3

A

IFSM

non-repetitive peak

forward current

tp = 10 ms; square wave; Tj(init) = 25 °C

-

1.7

A

IFRM

repetitive peak forward

current

-

625

mA

Per device

Ptot

total power dissipation

Tamb ≤ 25 °C

[2]

-

200

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-55

150

°C

Tstg

storage temperature

-65

150

°C

[1] Single diode loaded.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1]

-

-

625

K/W

Rth(j-sp)

thermal resistance from

junction to solder point

-

-

300

K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

IF = 100 mA; Tamb = 25 °C

-

-

1

V

VF

forward voltage

IF = 200 mA; Tamb = 25 °C

-

-

1.25

V

VR = 200 V; Tamb = 25 °C

-

-

100

nA

IR

reverse current

VR = 200 V; Tj = 150 °C

-

-

100

µA

Cd

diode capacitance

VR = 0 V; f = 1 MHz; Tamb = 25 °C

-

-

2

pF

trr

reverse recovery time

IF = 10 mA; IR = 10 mA; RL = 100 Ω;

IR(meas) = 1 mA; Tamb = 25 °C

-

-

50

ns

BAS21SW

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© Nexperia B.V. 2023. All rights reserved

Product data sheet

5 January 2023

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