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Datenblatt-Suchmaschine für elektronische Bauteile |
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2PB709ASL/DG Datenblatt(PDF) 4 Page - Nexperia B.V. All rights reserved |
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2PB709ASL/DG Datenblatt(HTML) 4 Page - Nexperia B.V. All rights reserved |
4 / 9 page ![]() 2PB709AXL_1 Product data sheet Rev. 01 — 12 November 2008 4 of 9 Nexperia 2PB709ARL; 2PB709ASL 45 V, 100 mA PNP general-purpose transistors [1] Pulse test: tp ≤ 300 µs; δ≤ 0.02. 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline fT transition frequency VCE = −10 V; IC = −1 mA; f = 100 MHz hFE group R 70 - - MHz hFE group S 80 - - MHz Cc collector capacitance VCB = −10 V; IE =ie =0A; f=1MHz --5 pF Table 8. Characteristics …continued Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Fig 1. Package outline SOT23 (TO-236AB) 04-11-04 Dimensions in mm 0.45 0.15 1.9 1.1 0.9 3.0 2.8 2.5 2.1 1.4 1.2 0.48 0.38 0.15 0.09 12 3 © Nexperia B.V. 2017. All rights reserved |
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