1998

©

Document No. D16199EJ1V0DS00

Date Published April 2002 N CP(K)

Printed in Japan

SILICON TRANSISTORS

2SD1616, 2SD1616A

NPN SILICON EPITAXIAL TRANSISTOR

FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

DATA SHEET

2002

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

FEATURES

•

Low VCE(sat):

VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA)

•

Large PT in small dimension with versatility

PT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A

•

Complementary transistor with the 2SB1116 and 1116A

ABSOLUTE MAXIMUM RATINGS (Ta = 25

°°°°C)

Ratings

Parameter

Symbol

2SD1616 2SD1616A

Unit

Collector to base voltage

VCBO

60

120

V

Collector to emitter voltage

VCEO

50

60

V

Emitter to base voltage

VEBO

6.0

V

Collector current (DC)

IC(DC)

1.0

A

Collector current (pulse)

IC(Pulse)*2.0

A

Total power dissipation

PT

0.75

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

*PW

≤ 10 ms, duty cycle ≤ 50%

PACKAGE DRAWING (UNIT: mm)

ELECTRICAL CHARACTERISTICS (Ta = 25

°°°°C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Collector cutoff current

ICBO

VCB = 60 V, IE = 0

100

nA

Emitter cutoff current

IEBO

VEB = 6.0 V, IC = 0

100

nA

DC current gain

hFE1**

VCE = 2.0 V, IC = 100 mA

135

600/400

−

DC current gain

hFE2**

VCE = 2.0 V, IC = 1.0 A

81

−

DC base voltage

VBE**

VCE = 2.0 V, IC = 50 mA

600

640

700

mV

Collector saturation voltage

VCE(sat)**

IC = 1.0 A, IB = 50 mA

0.15

0.3

V

Base saturation voltage

VBE(sat)**

IC = 1.0 A, IB = 50 mA

0.9

1.2

V

Output capacitance

Cob

VCB = 10 V, IE = 0, f = 1.0 MHz

19

pF

Gain bandwidth product

fT

VCE = 2.0 V, IC =

100 mA

100

160

MHz

Turn-on time

ton

0.07

µs

Storage time

tstg

0.95

µs

Fall time

tf

VCC = 10 V, IC = 100 mA

IB1 =

−IB2 = 10 mA

VBE(off) =

−2 to –3 V

0.07

µs

** Pulse test PW

≤ 350

µs, duty cycle ≤ 2% per pulsed

hFE1/hFE CLASSIFICATION L : 135 to 270 K : 200 to 400 U : 300 to 600 (U rank is not available for the 2SD1616A.)