Nexperia

PDTC123JM

50 V, 100 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V(BR)CBO

collector-base

breakdown voltage

IC = 100 µA; IE = 0 A; Tamb = 25 °C

50

-

-

V

V(BR)CEO

collector-emitter

breakdown voltage

IC = 2 mA; IB = 0 A; Tamb = 25 °C

50

-

-

V

ICBO

collector-base cut-off

current

VCB = 50 V; IE = 0 A; Tamb = 25 °C

-

-

100

nA

VCE = 30 V; IB = 0 A; Tamb = 25 °C

-

-

1

µA

ICEO

collector-emitter cut-off

current

VCE = 30 V; IB = 0 A; Tj = 150 °C

-

-

5

µA

IEBO

emitter-base cut-off

current

VEB = 5 V; IC = 0 A; Tamb = 25 °C

-

-

180

µA

hFE

DC current gain

VCE = 5 V; IC = 10 mA; Tamb = 25 °C

100

-

-

VCEsat

collector-emitter

saturation voltage

IC = 5 mA; IB = 0.25 mA; Tamb = 25 °C

-

-

100

mV

VI(off)

off-state input voltage

VCE = 5 V; IC = 100 µA; Tamb = 25 °C

-

0.6

0.5

V

VI(on)

on-state input voltage

VCE = 0.3 V; IC = 5 mA; Tamb = 25 °C

1.1

0.75

-

V

R1

bias resistor 1 (input)

[1]

1.54

2.2

2.86

kΩ

R2/R1

bias resistor ratio

[1]

17

21

26

Cc

collector capacitance

VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz;

Tamb = 25 °C

-

-

2.5

pF

fT

transition frequency

VCE = 5 V; IC = 10 mA; f = 100 MHz;

Tamb = 25 °C

[2]

-

230

-

MHz

[1] See "Section 11: Test information" for resistor calculation and test conditions.

[2] Characteristics of built-in transistor.

IC (mA)

10-1

102

10

1

006aac805

102

10

103

hFE

1

(1)

(2)

(3)

VCE = 5 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = -40 °C

Fig. 3. DC current gain as a function of collector

current; typical values

006aac810

IC (mA)

10-1

102

10

1

10-1

1

VCEsat

(V)

10-2

(1)

(2)

(3)

IC/IB = 20

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = -40 °C

Fig. 4. Collector-emitter saturation voltage as a

function of collector current; typical values

PDTC123JM

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© Nexperia B.V. 2023. All rights reserved

Product data sheet

1 April 2023

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