FS5AS-10A datasheet(2/7 Pages) RENESAS

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FS5AS-10A

Rev.1.00, Aug.20.2004, page 2 of 6

Electrical Characteristics

(Tch = 25°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test conditions

Drain-source breakdown voltage

V(BR)DSS

500

—

ID = 1 mA, VGS = 0 V

Gate-source breakdown voltage

V(BR)GSS

±30

—

IG =

±100 µA, VDS = 0 V

Gate-source leakage current

IGSS

——

±10

µAVGS = ±25 V, VDS = 0 V

Drain-source leakage current

IDSS

——

VDS = 500 V, VGS = 0 V

Gate-source threshold voltage

VGS(th)

2.5

3.0

3.5

ID = 1 mA, VDS = 10 V

Drain-source on-state resistance

rDS(ON)

—1.2

1.5

Ω

ID = 2 A, VGS = 10 V

Drain-source on-state voltage

VDS(ON)

—2.4

3.0

ID = 2 A, VGS = 10 V

Forward transfer admittance

| yfs |2.7

4.5

—

ID = 2 A, VDS = 10 V

Input capacitance

Ciss

—

700

—

Output capacitance

Coss

—

Reverse transfer capacitance

Crss

—

VDS = 25 V, VGS = 10 V,

f = 1MHz

Turn-on delay time

td(on)

—15—

Rise time

—20—

Turn-off delay time

td(off)

—90—

Fall time

—30—

VDD = 200 V, ID = 2 A,

VGS = 10 V,

RGEN = RGS = 50

Ω

Source-drain voltage

VSD

—1.5

2.0

IS = 2 A, VGS = 0 V

Thermal resistance

Rth(ch-c)

—

1.92

°C/W

Channel to case

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