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STM32G0C1NET3XTR Datenblatt(PDF) 86 Page - STMicroelectronics |
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STM32G0C1NET3XTR Datenblatt(HTML) 86 Page - STMicroelectronics |
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86 / 159 page ![]() Electrical characteristics STM32G0C1xC/xE 86/159 DS13564 Rev 4 Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator design guide for ST microcontrollers” available from the ST website www.st.com. Figure 21. Typical application with a 32.768 kHz crystal Note: An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden to add one. Table 43. LSE oscillator characteristics (fLSE = 32.768 kHz)(1) Symbol Parameter Conditions(2) Min Typ Max Unit IDD(LSE) LSE current consumption LSEDRV[1:0] = 00 Low drive capability -250 - nA LSEDRV[1:0] = 01 Medium low drive capability -315 - LSEDRV[1:0] = 10 Medium high drive capability -500 - LSEDRV[1:0] = 11 High drive capability -630 - Gmcritmax Maximum critical crystal gm LSEDRV[1:0] = 00 Low drive capability -- 0.5 µA/V LSEDRV[1:0] = 01 Medium low drive capability - - 0.75 LSEDRV[1:0] = 10 Medium high drive capability -- 1.7 LSEDRV[1:0] = 11 High drive capability -- 2.7 tSU(LSE)(3) Startup time VDD is stabilized - 2 - s 1. Guaranteed by design. 2. Refer to the note and caution paragraphs below the table, and to the application note AN2867 “Oscillator design guide for ST microcontrollers”. 3. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation is reached. This value is measured for a standard crystal and it can vary significantly with the crystal manufacturer MS30253V2 OSC32_IN OSC32_OUT Drive programmable amplifier fLSE 32.768 kHz resonator Resonator with integrated capacitors CL1 CL2 |
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