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STM32G0C1NET3X Datenblatt(PDF) 75 Page - STMicroelectronics |
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STM32G0C1NET3X Datenblatt(HTML) 75 Page - STMicroelectronics |
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75 / 159 page ![]() DS13564 Rev 4 75/159 STM32G0C1xC/xE Electrical characteristics 124 3. Reduced code used for characterization results provided in Table 28. Table 30. Current consumption in Sleep and Low-power sleep modes Symbol Parameter Conditions Typ Max(1) Unit General Voltage scaling fHCLK 25 °C 85 °C 125 °C 25 °C 85 °C 130 °C IDD(Sleep) Supply current in Sleep mode Flash memory enabled; fHCLK = fHSE bypass (≤16 MHz; PLL disabled), fHCLK = fPLLRCLK (>16 MHz; PLL enabled); All peripherals disabled Range 1 64 MHz 1.9 2.0 2.6 2.5 2.6 3.3 mA 56 MHz 1.7 1.8 2.4 2.2 2.4 3.2 48 MHz 1.5 1.6 2.2 1.9 2.1 2.8 32 MHz 1.1 1.2 1.8 1.4 1.6 2.3 24 MHz 0.9 1.0 1.6 1.2 1.3 2.1 16 MHz 0.5 0.6 1.2 0.7 0.9 1.6 Range 2 16 MHz 0.4 0.6 1.0 0.6 0.7 1.4 8 MHz 0.3 0.4 0.9 0.4 0.5 1.2 2 MHz 0.2 0.3 0.7 0.2 0.4 1.0 IDD(LPSleep) Supply current in Low-power sleep mode Flash memory disabled; PLL disabled; fHCLK = fHSE bypass (> 32 kHz), fHCLK = fLSE bypass (= 32 kHz); All peripherals disabled 2 MHz 70 200 705 175 500 1325 µA 1 MHz 48 175 685 145 438 1285 500 kHz 37 165 670 130 413 1255 125 kHz 28 155 665 105 388 1250 32 kHz 26 150 660 90 375 1210 1. Based on characterization results, not tested in production. Table 31. Current consumption in Stop 0 mode Symbol Parameter Conditions Typ Max(1) Unit HSI kernel VDD 25°C 85°C 125°C 25°C 85°C 130°C IDD(Stop 0) Supply current in Stop 0 mode Enabled 1.8 V 290 370 675 370 470 850 µA 2.4 V 295 370 680 370 470 870 3 V 295 375 695 375 475 930 3.6 V 300 380 695 375 475 1050 Disabled 1.8 V 100 190 505 180 290 680 2.4 V 100 195 510 180 290 685 3 V 105 195 525 180 295 695 3.6 V 105 200 530 185 305 830 1. Based on characterization results, not tested in production. |
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