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JANS2ST3360KT Datenblatt(PDF) 6 Page - STMicroelectronics

Teilenummer JANS2ST3360KT
Bauteilbeschribung  Rad-Hard 60 V, 0.8 A NPN and PNP complementary transistors
PDF  12 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
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Radiation hardness assurance
JANSR2ST3360K is guaranteed at 100 krad in compliance with the MIL-PRF-19500 Group D between 50 and
300 rad/s and 0.1 rad/s as per ESCC 22900. Post radiation electrical characteristics are described in Table 5 and
Table 6.
Table 5. MIL-PRF-19500 post radiation electrical characteristics for NPN
(Tamb = 25 °C unless otherwise specified)
Symbol
Parameter
Test conditions
Min.
Max
Unit
ICBO
Collector cut-off current (IE=0)
VCB= 60 V
200
nA
IEBO
Emitter cut-off current (IC= 0)
VEB = 6 V
200
nA
VBE(on)
VBE(on) Base-emitter on voltage
VCE = 2 V, IC = 100 mA
600
828
mV
V(BR)CBO
Collector-base breakdown voltage (IE= 0)
IC=100 μA
60
V
V(BR)CEO
Collector-emitter breakdown voltage (IB = 0)
IC = 1 mA
60
V
V(BR)EBO
Emitter-base breakdown voltage (IC= 0)
IE = 10 μA
6
V
VCE(sat)(1)
Collector-emitter saturation voltage
IC=0.8 A, IB = 40 mA
184
mV
IC= 2 A, IB = 100 mA
437
hFE(1)
DC current gain
IC= 100 mA, VCE= 2 V
[50](2)
IC= 1 A, VCE= 2 V
[80](2)
400
1. Pulsed duration = 300 μs, duty cycle ≥ 2 %
2. See method 1019 of MIL-STD-750 about how to determine [hFE] by first calculating the delta (1/hFE) from the pre- and
post-radiation hFE. Note that the [hFE] is not the same as hFE and cannot be measured directly. The [hFE] value can never
exceed the pre-radiation minimum hFE, which is based upon.
Table 6. MIL-PRF-19500 post radiation electrical characteristics for PNP
(Tamb = 25 °C unless otherwise specified)
Symbol
Parameter
Test conditions
Min.
Max
Unit
ICBO
Collector cut-off current (IE=0)
VCB= 60 V
200
nA
IEBO
Emitter cut-off current (IC= 0)
VEB = 6 V
200
nA
VBE(on)
Base-emitter on voltage
VCE = 2 V, IC = 100 mA
600
828
mV
V(BR)CBO
Collector-base breakdown voltage (IE= 0)
IC= 100 μA
60
V
V(BR)CEO
Collector-emitter breakdown voltage (IB = 0)
IC = 1 mA
60
V
V(BR)EBO
Emitter-base breakdown voltage (IC= 0)
IE = 10 μA
6
V
VCE(sat)(1)
Collector-emitter saturation voltage
IC=0.8 A, IB = 40 mA
207
mV
IC= 2 A, IB = 100 mA
506
hFE(2)
DC current gain
IC= 100 mA, VCE= 2 V
[50](3)
IC= 1 A, VCE= 2 V
[80](3)
400
1. Pulsed duration = 300 μs, duty cycle ≥ 2 %
2. For PNP type, voltage and current values are negative.
3. See method 1019 of MIL-STD-750 about how to determine [hFE] by first calculating the delta (1/hFE) from the pre- and
post-radiation hFE. Note that the [hFE] is not the same as hFE and cannot be measured directly. The [hFE] value can never
exceed the pre-radiation minimum hFE, which is based upon.
JANS2ST3360K
Radiation assurance
DS11305 - Rev 3
page 6/12



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