AT45DB321E datasheet(39/69 Pages) RENESAS

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AT45DB321E

8784M–DFLASH–02/2022

14.

Command Tables

Table 14-1. Read Commands

Table 14-2. Program and Erase Commands

Command

Opcode

Main Memory Page Read

D2h

Continuous Array Read (Low Power Mode)

01h

Continuous Array Read (Low Frequency)

03h

Continuous Array Read (High Frequency)

0Bh

Continuous Array Read (High Frequency)

1Bh

Continuous Array Read (Legacy Command – Not Recommended for New Designs)

E8h

Buffer 1 Read (Low Frequency)

D1h

Buffer 2 Read (Low Frequency)

D3h

Buffer 1 Read (High Frequency)

D4h

Buffer 2 Read (High Frequency)

D6h

Command

Opcode

Buffer 1 Write

84h

Buffer 2 Write

87h

Buffer 1 to Main Memory Page Program with Built-In Erase

83h

Buffer 2 to Main Memory Page Program with Built-In Erase

86h

Buffer 1 to Main Memory Page Program without Built-In Erase

88h

Buffer 2 to Main Memory Page Program without Built-In Erase

89h

Main Memory Page Program through Buffer 1 with Built-In Erase

82h

Main Memory Page Program through Buffer 2 with Built-In Erase

85h

Main Memory Byte/Page Program through Buffer 1 without Built-In Erase

02h

Page Erase

81h

Block Erase

50h

Sector Erase

7Ch

Chip Erase

C7h + 94h + 80h + 9Ah

Program/Erase Suspend

B0h

Program/Erase Resume

D0h

Read-Modify-Write through Buffer 1

58h

Read-Modify-Write through Buffer 2

59h

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