PDTC114EMB datasheet(2/12 Pages) NEXPERIA

Teilenummer	PDTC114EMB

Bauteilbeschribung	NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ

PDF	12 Pages

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Hersteller	NEXPERIA [Nexperia B.V. All rights reserved]

Direct Link	https://www.nexperia.com/

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Product profile

1.1 General description

NPN Resistor-Equipped Transistor (RET) in a leadless ultra small

DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

PNP complement: PDTA114EMB.

1.2 Features and benefits

 100 mA output current capability

 Reduces component count

 Built-in bias resistors

 Reduces pick and place costs

 Simplifies circuit design

 AEC-Q101 qualified

 Leadless ultra small SMD plastic

package

 Low package height of 0.37 mm

1.3 Applications

 Low-current peripheral driver

 Control of IC inputs

 Replaces general-purpose transistors

in digital applications

 Mobile applications

1.4 Quick reference data

PDTC114EMB

NPN resistor-equipped transistor; R1 = 10 k

Ω, R2 = 10 kΩ

Rev. 1 — 21 June 2012

Product data sheet

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VCEO

collector-emitter

voltage

open base

output current

100

bias resistor 1 (input)

Tamb = 25 °C

Ω

R2/R1

bias resistor ratio

0.8

1.2

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