PDTC144VT datasheet(6/12 Pages) NEXPERIA

Teilenummer	PDTC144VT

Bauteilbeschribung	NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ

PDF	12 Pages

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Hersteller	NEXPERIA [Nexperia B.V. All rights reserved]

Direct Link	https://www.nexperia.com/

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PDTC144V_SER_4

Product data sheet

Rev. 04 — 16 November 2009

5 of 11

NXP Semiconductors

PDTC144V series

NPN resistor-equipped transistors; R1 = 47 k

Ω, R2 = 10 kΩ

Characteristics

Table 8.

Characteristics

Tamb =25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off

current

VCB =50V; IE = 0 A

100

ICEO

collector-emitter

cut-off current

VCE =30V; IB =0A

μA

VCE =30V; IB =0A;

Tj = 150 °C

μA

IEBO

emitter-base cut-off

current

VEB =5V; IC =0A

150

μA

hFE

DC current gain

VCE =5V; IC =5 mA

VCEsat

collector-emitter

saturation voltage

IC =10mA; IB =0.5 mA

150

VI(off)

off-state input voltage

VCE =5V; IC = 100 μA-

3.1

VI(on)

on-state input voltage VCE =300 mV; IC =2mA

3.8

bias resistor 1 (input)

R2/R1

bias resistor ratio

0.17

0.21

0.26

collector capacitance

VCB =10V; IE =ie =0A;

f=1MHz

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