PEMB13_PUMB13

All information provided in this document is subject to legal disclaimers.

© NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 4 — 7 December 2011

6 of 14

NXP Semiconductors

PEMB13; PUMB13

PNP/PNP resistor-equipped transistors; R1 = 4.7 k

, R2 = 47 k

7.

Characteristics

[1]

Characteristics of built-in transistor

Table 8.

Characteristics

Tamb =25 C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

ICBO

collector-base cut-off

current

VCB = 50 V; IE =0A

-

-

100 nA

ICEO

collector-emitter cut-off

current

VCE = 30 V; IB =0A

-

-

1

A

VCE = 30 V; IB =0A;

Tj =150 C

--

5

A

IEBO

emitter-base cut-off

current

VEB = 5V; IC =0A

-

-

170 A

hFE

DC current gain

VCE = 5V; IC = 10 mA

100

-

-

VCEsat

collector-emitter

saturation voltage

IC = 5mA; IB = 0.25 mA

-

-

100 mV

VI(off)

off-state input voltage

VCE = 5V; IC = 100 A-

0.6

0.5

V

VI(on)

on-state input voltage

VCE = 0.3 V; IC = 5mA

1.3

0.9

-

V

R1

bias resistor 1 (input)

3.3

4.7

6.1

k



R2/R1

bias resistor ratio

8

10

12

Cc

collector capacitance

VCB = 10 V; IE =ie =0A;

f=1MHz

--

3

pF

fT

transition frequency

VCE = 5V; IC = 10 mA;

f=100MHz

[1]

-

180

-

MHz