HCS157MS

FN3561 Rev 1.00

Page 9 of 9

September 1995

GLASSIVATION:

Type: SiO2

Thickness: 13k

Å  2.6kÅ

WORST CASE CURRENT DENSITY:

<2.0 x 105A/cm2

BOND PAD SIZE:

100

m x 100m

4 mils x 4 mils

Metallization Mask Layout

HCS157MS

NOTE: The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location. The mask

series for the HCS157 is TA14371A.

(14) 4I0

(13) 4I1

(12) 4Y

(11) 3I0

(10) 3I1

1I1 (3)

1Y (4)

2I0 (5)

2I1 (6)