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HCS244D Datenblatt(PDF) 4 Page - Renesas Technology Corp

Teilenummer HCS244D
Bauteilbeschribung  Radiation Hardened Octal Buffer/Line Driver, Three-State
PDF  10 Pages
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Hersteller  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HCS244D Datenblatt(HTML) 4 Page - Renesas Technology Corp

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HCS244MS
FN2132 Rev 2.00
Page 4 of 10
September 1995
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Propagation Delay
Data to Output
TPLH
TPHL
VCC = 4.5V
9
+25oC
2
21
ns
10, 11
+125oC, -55oC
2
25
ns
Enable to Output
TPZL
VCC = 4.5V
9
+25oC
2
25
ns
10, 11
+125oC, -55oC
2
30
ns
Enable to Output
TPZH
VCC = 4.5V
9
+25oC
2
20
ns
10, 11
+125oC, -55oC
2
24
ns
Disable to Output
TPLZ
TPHZ
VCC = 4.5V
9
+25oC
2
25
ns
10, 11
+125oC, -55oC
2
30
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Capacitance Power
Dissipation
CPD
VCC = 5.0V, f = 1MHz
1
+25oC
-
45
pF
1
+125oC, -55oC
-
45
pF
Input Capacitance
CIN
VCC = 5.0V, f = 1MHz
1
+25oC
-
10
pF
1
+125oC
-
10
pF
Output Transition
Time
TTHL
TTLH
VCC = 4.5V
1
+25oC
-
12
ns
1
+125oC, -55oC
-
18
ns
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
TEMPERATURE
200K RAD
LIMITS
UNITS
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V, VIN = VCC or GND
+25oC-
0.75
mA
Output Current (Sink)
IOL
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
+25oC6.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
+25oC-6.0
-
mA



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