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CD631615B Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer CD631615B
Bauteilbeschribung  Thyristor Modules
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

CD631615B Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
CD631615B
Thyristor Modules
FEATURES
·
Long-term stability
·
Low Leakage Current
·
Base plate: Copper
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VRRM
VDRM
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Blocking Voltage
1600
V
IT(AV)
Average on-state current
sin. 180; Tc = 85(100)℃
150
A
ITSM
Peak, One-cycle,
Non-repetitive Surge Current
Tvj = 25℃; 10ms
5400
A
Tvj = 125℃; 10ms
5000
I2t
For Fusing
Tvj = 25℃; 8，3 ...10ms
1450
KA2S
Tvj = 125℃; 8，3 ...10ms
125
Viso
isolation voltage
a. c. 50Hz; r.m.s. ; 1s/1min
3600/3000
V~
TJ
Junction Temperature
-40~125
℃
Tstg
Storage Temperature Range
-40~125
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
per thyristor / per module
0.17/0.085
K/W


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