CEF840G datasheet(1/4 Pages) CET-MOS

Teilenummer	CEF840G

Bauteilbeschribung	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

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Hersteller	CET-MOS [CET-MOS Technology Corp.]

Direct Link	https://www.cet-mos.com/en/index.asp

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1 / 4 page

TO-220/263

CEP840G/CEB840G

CEF840G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Parameter

Symbol

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed a

Maximum Power Dissipation @ TC = 25 C

- Derate above 25 C

VDS

VGS

ID

PD

IDM f

500

1.0

125

32

8

±30

V

W

A

V

W/ C

1

S

G

D

G

S

D

CEB SERIES

TO-263(DD-PAK)

S

D

G

CEP SERIES

TO-220

CEF SERIES

TO-220F

S

D

G

Type

VDSS

RDS(ON)

ID

@VGS

CEP840G

CEF840G

500V

0.85Ω

8A

8A e

10V

0.32

40

32 e

8 e

CEB840G

500V

0.85Ω

8A

10V

RoHS compliant.

http://www.cet-mos.com

TO-220F

Details are subject to change without notice .

Rev 2. 2008.Feb.

Operating and Store Temperature Range

TJ,Tstg

-55 to 150

C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Parameter

Symbol

Limit

Units

C/W

62.5

1.0

RθJC

RθJA

3.1

65

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