BAT74S datasheet(4/12 Pages) PHILIPS

Teilenummer	BAT74S

Bauteilbeschribung	Schottky barrier double diode

PDF	12 Pages

Scroll/Zoom	100%

Hersteller	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

Logo

4 / 12 page

1998 Jul 10

Philips Semiconductors

Product speciﬁcation

Schottky barrier double diode

BAT74S

ELECTRICAL CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulsed test: tp = 300 µs; δ = 0.02.

THERMAL CHARACTERISTICS

Note

1. Refer to SOT363 standard mounting conditions.

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

Per diode

forward voltage

see Fig.3

IF = 0.1 mA

240

IF =1mA

320

IF =10mA

400

IF =30mA

500

IF = 100 mA

800

reverse current

VR = 25 V; note 1; see Fig.4

µA

trr

reverse recovery time

when switched from IF = 10 mA to

IR = 10 mA; RL = 100 Ω;

measured at IR =1mA

5ns

diode capacitance

f = 1 MHz; VR = 1 V; see Fig.5

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

416

K/W

BAT74S Datenblatt(PDF) 4 Page - NXP Semiconductors

BAT74S Datenblatt(HTML) 4 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datenblatt Download

Link URL