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ISL71840SEHF/PROTO Datenblatt(PDF) 21 Page - Renesas Technology Corp |
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ISL71840SEHF/PROTO Datenblatt(HTML) 21 Page - Renesas Technology Corp |
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21 / 28 page ![]() ISL71840SEH FN8734 Rev.5.01 Page 21 of 27 Oct 24, 2022 FIGURE 66. tENABLE SHIFT vs LDR RADIATION FIGURE 67. tDISABLE SHIFT vs LDR RADIATION Post Low Dose Rate Radiation Characteristics (V± = ±15V) Unless otherwise specified, V± = ±15V, VCM =0, VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a low dose rate of <10mrad(Si)/s. This data is intended to show typical parameter shifts due to low dose rate radiation. These are not limits, nor are they guaranteed. (Continued) -10 -5 0 5 10 15 20 0 10 20 30 40 50 60 LOW DOSE RATE RADIATION (krad(Si)) BIASED GROUNDED 0 50 100 150 200 250 300 0 10 20 30 40 50 60 LOW DOSE RATE RADIATION (krad(Si)) BIASED GROUNDED Post Low Dose Rate Radiation Characteristics (V± = ±12V) Unless otherwise specified, V± = ±12V, VCM =0,VO = 0V, TA = +25°C. This data is typical mean test data post radiation exposure at a low dose rate of <10mrad(Si)/s. This data is intended to show typical parameter shifts due to low dose rate radiation. These are not limits, nor are they guaranteed. FIGURE 68. ICC SUPPLY CURRENT SHIFT vs LDR RADIATION FIGURE 69. IEE SUPPLY CURRENT SHIFT vs LDR RADIATION FIGURE 70. IREF SUPPLY CURRENT SHIFT vs LDR RADIATION FIGURE 71. rDS(ON) SHIFT (VIN = V+) vs LDR RADIATION 0 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50 60 LOW DOSE RATE RADIATION (krad(Si)) BIASED GROUNDED -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 0 10 20 30 40 50 60 LOW DOSE RATE RADIATION (krad(Si)) BIASED GROUNDED 0 0.5 1.0 1.5 2.0 2.5 0 10 20 30 40 50 60 LOW DOSE RATE RADIATION (krad(Si)) BIASED GROUNDED -5 0 5 10 15 20 25 30 35 0 10 20 30 40 50 60 LOW DOSE RATE RADIATION (krad(Si)) BIASED GROUNDED |
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