D5V0L1B2TQ

Document number: DS41908 Rev. 1 - 2

2 of 5

www.diodes.com

November 2019

© Diodes Incorporated

D5V0L1B2TQ

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Conditions

Peak Pulse Power Dissipation

PPP

78

W

8/20µs, per Figure 2

Peak Pulse Current

IPP

6

A

8/20µs, per Figure 2

ESD Protection

—Contact Discharge

VESD_CONTACT

±30

kV

IEC 61000-4-2 Standard

ESD Protection

—Air Discharge

VESD_AIR

±30

kV

IEC 61000-4-2 Standard

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Package Power Dissipation (Note 5)

PD

275

mW

Thermal Resistance, Junction to Ambient (Note 5)

RϴJA

454

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-65 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Reverse Standoff Voltage

VRWM

—

—

5

V

—

Channel Leakage Current (Note 6)

IRM

—

10

100

nA

VRWM = 5V

Clamping Voltage, Positive Transients

VCL

—

—

—

—



7.0

8.7

10.5

11.5

9.0

10.7

12.0

14.0

V

IPP = 1A, tp = 8/20μs

IPP = 3A, tp = 8/20μs

IPP = 5A, tp = 8/20μs

IPP = 6A, tp = 8/20μs

Breakdown Voltage

VBR

6

7

8

V

IR = 1mA

Differential Resistance

RDIF

—



0.2

—

Ω

IR = 1A, tp = 8/20μs

Channel Input Capacitance

CIN

—

15

20

pF

VR = 0V, f = 1MHz

Notes:

5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown at http://www.diodes.com/package-outlines.html.

6. Short duration pulse test used to minimize self-heating effect.