BC878 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 May 31

Philips Semiconductors

Product speciﬁcation

PNP Darlington transistor

BC878

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICES

collector cut-off current

VBE = 0; VCE = −60 V

−−−50

IEBO

emitter cut-off current

IC = 0; VEB = −4V

−−−50

hFE

DC current gain

IC = −150 mA; VCE = −10 V; see Fig.2 1000

−−

IC = −0.5 A; VCE = −10 V; see Fig.2

2000

−−

VCEsat

collector-emitter saturation

voltage

IC = −0.5 A; IB = −0.5 mA

−−−1.3

IC = −1 A; IB = −1mA

−−−1.8

VBEsat

base-emitter saturation voltage

IC = −1 A; IB = −1mA

−−−2.2

transition frequency

IC = −0.5 A; VCE = −5 V; f = 100 MHz

−

200

−

MHz

Switching times (between 10% and 90% levels)

ton

turn-on time

ICon = −500 mA; IBon = −0.5 mA;

IBoff = 0.5 mA

−−

500

toff

turn-off time

−−

700

Fig.2 DC current gain; typical values.

handbook, full pagewidth

6000

2000

1000

3000

4000

5000

MGD839

−10−1

−1

−10

−102

−103

hFE

IC (mA)

VCE = −10 V.

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