BFE520 datasheet(2/8 Pages) PHILIPS

2 / 8 page

1996 Oct 08

Philips Semiconductors

Product speciﬁcation

NPN wideband differential transistor

BFE520

FEATURES

• Small size

• High power gain at low bias current and voltage

• Temperature matched

• Balanced configuration

• hFE matched

• Continues to operate at VCE <1V.

APPLICATIONS

• Single balanced mixers

• Balanced amplifiers

• Balanced oscillators.

DESCRIPTION

Emitter coupled dual NPN silicon RF transistor in a surface

mount 5-pin SOT353 (S-mini) package. The transistor is

primarily intended for applications in the RF front end as a

balanced mixer, a differential amplifier in analog and digital

cellular phones, and in cordless phones, pagers and

satellite TV-tuners.

PINNING - SOT353B

SYMBOL

DESCRIPTION

base 1

emitter

base 2

collector 2

collector 1

handbook, halfpage

Top view

MAM211

Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Any single transistor

Cre

feedback capacitance CBC

Ie = 0; VCB = 3 V; f = 1 MHz

−

0.35

0.4

MSG/Gmax

maximum power gain

IC = 20 mA; VCE = 3 V; f = 900 MHz

−

IC = 20 mA; VCE = 3 V; f = 2 GHz

−

noise ﬁgure

IC = 5 mA; VCE = 3 V; f = 900 MHz;

ΓS = Γopt

−

1.1

1.6

IC = 5 mA; VCE = 3 V; f = 2 GHz;

ΓS = Γopt

−

1.9

−

hFE

DC current gain

IC = 20 mA; VCE = 3 V

120

250

Rth j-s

thermal resistance from

junction to soldering point

single loaded

−−

230

K/W

double loaded

−−

115

K/W

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