BLP5LA55SGZ datasheet(1/20 Pages) AMPLEON

Teilenummer	BLP5LA55SGZ

Bauteilbeschribung	Power LDMOS transistor

PDF	20 Pages

Scroll/Zoom	100%

Hersteller	AMPLEON [Ampleon Netherlands B.V.]

Direct Link	https://www.ampleon.com

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1 / 20 page

1.

Product profile

1.1 General description

This 13.6 V 55 W device is designed for land mobile radio (LMR) applications supporting

the frequency range from HF up to 520 MHz.

1.2 Features and benefits

 High efficiency

 Integrated dual sided ESD protection

 Extreme ruggedness 65 : 1

 High power gain

 Excellent reliability

 Wideband

 High linearity

 For RoHS compliance see the product details on the Ampleon website

1.3 Applications

 TETRA, SSB and LTE mobile radio applications in VHF and UHF bands

 Wideband radio application, frequency range from 5 MHz to 30 MHz and from 30 MHz

to 512 MHz

BLP5LA55SG

Power LDMOS transistor

Rev. 1 — 7 April 2023

Product data sheet

Table 1.

Application performance

Typical RF performance at Tcase = 25 C; in a class-AB demo circuit.

Test signal

f

IDq

VDS

PL(AV)

Gp



D

RLin

(MHz)

(mA)

(V)

(W)

(dB)

(%)

(dB)

CW

145 to 165

893

15.0

63

>23.0

>66.4

7.8

380 to 450

80

13.6

55

>20.4

>62.3

6.3

520

100

13.6

55

19.6

75.0

15.3

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BLP5LA55SGZ Datenblatt(PDF) 1 Page - Ampleon Netherlands B.V.

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