BFS25 datasheet(3/11 Pages) PHILIPS

3 / 11 page

December 1997

Philips Semiconductors

Product speciﬁcation

NPN 5 GHz wideband transistor

BFS25A

THERMAL RESISTANCE

Note

1. Ts is the temperature at the soldering point of the collector tab.

CHARACTERISTICS

Tj =25 °C, unless otherwise speciﬁed.

Note

1. GUM is the maximum unilateral power gain, assuming S12 is zero and

SYMBOL

PARAMETER

CONDITIONS

THERMAL RESISTANCE

Rth j-s

thermal resistance from junction to

soldering point

up to Ts = 170 °C; note 1

190 K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =5 V

−−

hFE

DC current gain

IC = 0.5 mA; VCE = 1 V

200

Cre

feedback capacitance

IC = 0; VCB = 1 V; f = 1 MHz

−

0.3

0.45

transition frequency

IC = 1 mA; VCE = 1 V; f = 1 GHz;

Tamb =25 °C

3.5

−

GHz

GUM

maximum unilateral power gain

(note 1)

IC = 0.5 mA; VCE = 1 V; f = 1 GHz;

Tamb =25 °C

−

noise ﬁgure

s = Γopt;IC = 0.5 mA; VCE =1 V;

f = 1 GHz; Tamb =25 °C

−

1.8

−

s = Γopt;IC = 1 mA; VCE =1 V;

f = 1 GHz; Tamb =25 °C

−

10 log

–





–





--------------------------------------------------------------

dB.

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