2SB1386_V01 datasheet(1/4 Pages) DGNJDZ

Teilenummer	2SB1386

Bauteilbeschribung	SOT-89-3L Plastic-Encapsulate Transistors

PDF	4 Pages

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Hersteller	DGNJDZ [Nanjing International Group Co]

Direct Link	http://www.dgnjdz.com/

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Dongguan Nanjing Electronics Ltd.

2SB1386 TRANSISTOR (PNP)

FEATURES

Low collector saturation voltage

Execllent current-to-gain characteristics

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-30

V

VCEO

Collector-Emitter Voltage

-20

V

VEBO

Emitter-Base Voltage

-6

V

IC

Continuous Collector Current

-5

A

PC

Collector Power Dissipation

0.5

W

Operation Junction and

Storage Temperature Range

℃

TJ,Tstg

-55~150

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO IC=-50μA,IE=0

-30

V

Collector-emitter breakdown voltage

V(BR)CEO IC=-1mA,IB=0

-20

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-50μA,IC=0

-6

V

Collector cut-off current

ICBO

VCB=-20V,IE=0

-0.5

μA

Emitter cut-off current

IEBO

VEB=-5V,IC=0

-0.5

μA

DC current gain

hFE

VCE=-2V,IC=-500mA

82

390

Collector-emitter saturation voltage

VCE(sat)

IC=-4A,IB=-100mA

-1

V

Transition frequency

fT

VCE=-6V,IC=-50mA,f=30MHz

120

MHz

Collector output capacitance

Cob

VCB=-20V,IE=0,f=1MHz

60

pF

CLASSIFICATION OF hFE

Rank

P

Q

R

Range

82-180

120-270

180-390

Marking

BHP

BHQ

BHR

ICP*

Pulsed Collector Current

-10

A

*Single pulse,PW=10ms

SOT-89-3L

1. BASE

2. COLLECTOR

3. EMITTER

1

2

3

SOT-89-3L Plastic-Encapsulate Transistors

DONGGUAN NANJING ELECTRONICS LTD.,

www.dgnjdz.com

1/4

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