2SD965_V01 datasheet(1/4 Pages) DGNJDZ

Teilenummer	2SD965

Bauteilbeschribung	SOT-89-3L Plastic-Encapsulate Transistors

PDF	4 Pages

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Hersteller	DGNJDZ [Nanjing International Group Co]

Direct Link	http://www.dgnjdz.com/

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SOT-89-3L

1. BASE

2. COLLECTOR

3. EMITTER

SOT-89-3L Plastic-Encapsulate Transistors

2SD965

TRANSISTOR (NPN)

FEATURES

Low Collector-Emitter Saturation Voltage

Large Collector Power Dissipation and Current

Mini Power Type Package

: 965

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=100µA,IE=0

40

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA,IB=0

20

V

Emitter-base breakdown voltage

V(BR)EBO

IE=10µA,IC=0

7

V

Collector cut-off current

ICBO

VCB=10V,IE=0

0.1

µA

Emitter cut-off current

IEBO

VEB=7V,IC=0

0.1

µA

hFE(1)

VCE=2V, IC=1mA

200

hFE(2)

VCE=2V, IC=500mA

230

800

DC current gain

hFE(3)

VCE=2V, IC=2A

150

Collector-emitter saturation voltage

VCE(sat)

IC=3A,IB=0.1A

1

V

Transition frequency

fT

VCE=6V,IC=50mA，f=200MHz

150

MHz

Collector output capacitance

Cob

VCB=20V, IE=0, f=1MHz

50

pF

CLASSIFICATION OF hFE(2)

RANK

Q

R

S

RANGE

230–380

340–600

560–800

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

40

V

VCEO

Collector-Emitter Voltage

20

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current

5

A

PC

Collector Power Dissipation

750

mW

RθJA

Thermal Resistance From Junction To Ambient

167

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~+150

℃

www.cj-elec.com

1

C,Oct,2015

www.dgnjdz.com

NANJING INTERNATIONAL GROUP CO., LTD.

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