D882_V01 datasheet(1/2 Pages) DGNJDZ

Teilenummer	D882

Bauteilbeschribung	SOT-89-3L Plastic-Encapsulate Transistors

PDF	2 Pages

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Hersteller	DGNJDZ [Nanjing International Group Co]

Direct Link	http://www.dgnjdz.com/

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SOT-89-3L

Plastic-Encapsulate Transistors

D882 TRANSISTOR (NPN)

FEATURES

Power dissipation

MAXIMUM RATINGS (Ta=25

unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

40

V

VCEO

Collector-Emitter Voltage

30

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current -Continuous

3

A

PC

Collector Power Dissipation

0.5

W

TJ

Junction Temperature

150

ELECTRICAL CHARACTERISTICS(Ta=25

unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC = 100 A, IE=0

40

V

Collector-emitter breakdown voltage

V(BR)CEO

IC = 10mA, IB=0

30

V

Emitter-base breakdown voltage

V(BR)EBO

IE= 100 A, IC=0

6

V

Collector cut-off current

ICBO

VCB= 40V, IE=0

1

µA

Collector cut-off current

ICEO

VCE= 30V, IB=0

10

µA

Emitter cut-off current

IEBO

VEB= 6V, IC=0

1

µA

hFE(1)

VCE=2V, IC= 1A

60

400

DC current gain

hFE(2)

VCE=2V, IC= 100mA

32

Collector-emitter saturation voltage

VCE(sat)

IC= 2A, IB= 0.2 A

0.5

V

Base-emitter saturation voltage

VBE(sat)

IC= 2A, IB= 0.2 A

1.5

V

Transition frequency

fT

VCE= 5V , Ic=0.1A

f =10MHz

50

MHz

CLASSIFICATION OF hFE(1)

Rank

R

O

Y

GR

Range

60-120

100-200

160-320

200-400

SOT-89-3L

1. BASE

2. COLLECTOR

3. EMITTER

0

Tstg

Storage Temperature

-55~150

DONGGUAN NANJING ELECTRONICS LTD.,

www.dgnjdz.com

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D882 Datenblatt(PDF) 1 Page - Nanjing International Group Co

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