BLF522 datasheet(4/12 Pages) PHILIPS

4 / 12 page

September 1992

Philips Semiconductors

Product speciﬁcation

UHF power MOS transistor

BLF522

CHARACTERISTICS

Tj = 25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)DSS

drain-source breakdown voltage

VGS = 0; ID = 5 mA

−−

IDSS

drain-source leakage current

VGS = 0; VDS = 12.5 V

−−

0.5

IGSS

gate-source leakage current

±VGS = 20 V; VDS =0

−−

µA

VGS(th)

gate-source threshold voltage

ID = 50 mA; VDS = 10 V

−

4.5

gfs

forward transconductance

ID = 0.7 A; VDS = 10 V

200

270

−

RDS(on)

drain-source on-state resistance

ID = 0.7 A; VGS = 15 V

−

1.8

2.7

Ω

IDSX

on-state drain current

VGS = 15 V; VDS = 10 V

−

2.3

−

Cis

input capacitance

VGS = 0; VDS = 12.5 V; f = 1 MHz

−

Cos

output capacitance

VGS = 0; VDS = 12.5 V; f = 1 MHz

−

Crs

feedback capacitance

VGS = 0; VDS = 12.5 V; f = 1 MHz

−

Fig.4

Temperature coefficient of gate-source

voltage as a function of drain current, typical

values.

VDS = 10 V.

handbook, halfpage

T.C.

(mV/K)

−5

102

103

104

MRA254

ID(mA)

Fig.5

Drain current as a function of gate-source

voltage, typical values.

VDS = 10 V; Tj = 25 °C.

handbook, halfpage

MRA249

(A)

VGS (V)

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