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BLW77 Datenblatt(PDF) 8 Page - NXP Semiconductors

Teilenummer BLW77
Bauteilbeschribung  HF/VHF power transistor
PDF  17 Pages
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Hersteller  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BLW77 Datenblatt(HTML) 8 Page - NXP Semiconductors

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August 1986
8
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW77
1. Stated intermodulation distortion figures are referred
to the according level of either of the equal amplified
tones. Relative to the according peak envelope
powers these figures should be increased by 6 dB.
Fig.9
Intermodulation distortion as a function of
output power.(1.)
VCE = 28 V; IC(ZS) = 100 mA; f1 = 28,000 MHz;
f2 = 28,001 MHz; Th = 25 °C; typical values.
handbook, halfpage
0
100
50
150
−20
d3, d5
(dB)
−60
−40
MGP528
P.E.P. (W)
d5
d3
Fig.10 Double-tone efficiency and power gain as a
function of output power.
VCE = 28 V; IC(ZS) = 100 mA; f1 = 28,000 MHz;
f2 = 28,001 MHz; Th = 25 °C; typical values.
handbook, halfpage
0
50
100
150
60
40
ηdt
(%)
0
20
30
20
0
10
MGP529
P.E.P. (W)
ηdt
Gp
(dB)
Gp



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