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BSP110 Datenblatt(PDF) 4 Page - NXP Semiconductors |
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BSP110 Datenblatt(HTML) 4 Page - NXP Semiconductors |
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4 / 12 page ![]() April 1995 4 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP110 Output capacitance at f = 1 MHz; typ. max. 13 20 pF pF VDS = 10 V; VGS =0 Coss Feedback capacitance at f = 1 MHz; typ. max. 3 6 pF pF VDS = 10 V; VGS =0 Crss Switching times (see Figs 2 and 3) ID = 200 mA; VDD =50V; VGS = 0 to 10 V ton typ. max. 2 5 ns ns toff typ. max. 5 10 ns ns Fig.2 Switching time test circuit. handbook, halfpage MBB691 50 Ω VDD = 50 V ID 10 V 0 V Fig.3 Input and output waveforms. handbook, halfpage MBB692 10 % 90 % 90 % 10 % ton toff OUTPUT INPUT |
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