2SC5546 datasheet(4/11 Pages) PANASONIC

4 / 11 page

Parameter

Emitter to base voltage

Forward current transfer ratio

Base to emitter saturation voltage

Transition frequency

Storage time

Fall time

Diode characteristics

Rating

1600

130

-55 to +150

Unit

°C

Symbol

VCBO

VCES

VEBO

ICP

Tstg

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Base current

Collector power dissipation

Junction temperature

Storage temperature

40*1

3*2

min

4.5

0.3

3.8

Conditions

VCB=1000V,IE=0

VCB=1600V,IE=0

IE=500mA,IC=0

VCE=5V,IC=1A

VCE=5V,IC=4A

IC=4A,IB=0.8A

VCE=10V,IC=0.1A,f=0.5MHz

IC=4.5A,IB1=0.9A,IB2=-1.8A

IF=4A

s Electrical Characteristics(TC=25

°C )

Collector cutoff current

Collector to emitter saturation

voltage

Symbol

ICBO

VEBO

fFE

VCE(sat)

VBE(sat)

Tstg

typ

max

1.5

0.5

-2

Unit

µA

MHz

µs

s Absolute Maximum Ratings

*1)TC=25

°C ,*2)Ta=25°°C(Without heat sink)

*3)Non-repetitive peak collector current.

15.5

±0.5

3.0

±0.3

φ3.2±0.1

5.45

±0.3

123

5.45

±0.3

1.1

±0.1

2.0

±0.2

4.0

0.7

±0.1

TOP-3E

Unit:mm

2SC5517

Horizontal Deflection Output Transistor

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