BSP255 datasheet(2/10 Pages) PHILIPS

2 / 10 page

1996 Aug 05

Philips Semiconductors

Product speciﬁcation

P-channel enhancement mode

vertical D-MOS transistor

BSP255

FEATURES

• Direct interface to C-MOS, TTL etc

• Low threshold voltage

• High speed switching

• No secondary breakdown.

APPLICATIONS

• Line current interrupter in telephone sets

• Relay, high speed and line transformer drivers.

DESCRIPTION

P-channel enhancement mode vertical D-MOS transistor

in a 4-pin plastic SOT223 SMD package.

CAUTION

The device is supplied in an antistatic package. The

gate-source input must be protected against static

discharge during transport or handling.

PINNING - SOT223

SYMBOL

DESCRIPTION

gate

drain

source

drain

Fig.1 Simplified outline and symbol.

handbook, halfpage

MAM121

Top view

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDS

drain-source voltage (DC)

−−300

VSD

source-drain diode forward voltage

IS = −0.5 A

−−1.8

VGS

gate-source voltage (DC)

−±20

VGSth

gate-source threshold voltage

ID = −1 mA; VDS =VGS

−0.8

−2V

drain current (DC)

Ts = 100 °C

−−325

RDSon

drain-source on-state resistance

ID = −160 mA; VGS = −10 V

−

Ω

Ptot

total power dissipation

Ts = 100 °C

−

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