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3CD104 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer 3CD104
Bauteilbeschribung  isc Silicon PNP Power Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

3CD104 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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1
isc Silicon PNP Power Transistor
3CD104
DESCRIPTION
·
Collector-Emitter Breakdown Voltage-
: VCEO=-100V(Min)
·
Minimum Lot-to-Lot variations for robust device
Performance and reliable operation
APPLICATIONS
·
Power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNI
T
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-4
A
PD
Collector Power Dissipation
@ TC=25℃
25
W
TJ
Junction Temperature
-55~200
℃
Tstg
Storage Temperature Range
-55~200
℃


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