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BST80 Datenblatt(PDF) 2 Page - NXP Semiconductors

Teilenummer BST80
Bauteilbeschribung  N-channel enhancement mode vertical D-MOS transistor
PDF  12 Pages
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Hersteller  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BST80 Datenblatt(HTML) 2 Page - NXP Semiconductors

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1997 Jun 20
2
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BST80
FEATURES
• Low drain-source on-state resistance
• Direct interface to C-MOS, TTL, etc.
• High-speed switching
• No secondary breakdown.
APPLICATIONS
• Thin and thick film circuits
• Relay, high-speed and line transformer drivers.
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor
in a SOT89 package.
PINNING - SOT89
PIN
SYMBOL
DESCRIPTION
1
s
source
2
d
drain
3
g
gate
Fig.1 Simplified outline and symbol.
handbook, halfpage
12
3
s
d
g
MAM355
Bottom view
Marking code: KM
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VDS
drain-source voltage (DC)
−
80
V
VGSO
gate-source voltage (DC)
open drain
−±20
V
ID
drain current (DC)
−
500
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
−
1W
RDSon
drain-source on-state resistance
ID = 500 mA; VGS =10V
2
3
Ω
yfs
forward transfer admittance
ID = 500 mA; VDS =15V
300
−
mS



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