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FDMS86101DC Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer FDMS86101DC
Bauteilbeschribung  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

FDMS86101DC Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
FDMS86101DC
DESCRIPTION
·
Drain Source Voltage- : VDSS=100V(Min)
·
Fast Switching Speed
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Primary DC-DC MOSFET
·
Secondary Synchronous Rectifier
·
Load Switch
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
100
V
VGS
Gate-Source Voltage
±
20
V
ID
Drain Current-continuous@ TC=25℃
60
A
IDM
Drain Current-Single Pluse
200
A
PD
Power Dissipation@TC=25℃
125
W
EAS
Repetitive avalanche energy
216
mJ
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case(Top Source)
2.3
℃
/W
Rth j-c
Thermal Resistance,Junction to Case(Bottom Drain)
1.0
℃
/W
Gate
Drain
Source


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