2SB1189 datasheet(1/4 Pages) DGNJDZ

Teilenummer	2SB1189

Bauteilbeschribung	SOT-89-3L Plastic-Encapsulate Transistors

PDF	4 Pages

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Hersteller	DGNJDZ [Nanjing International Group Co]

Direct Link	http://www.dgnjdz.com/

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2SB1189 TRANSISTOR (PNP)

FEATURES

High breakdown voltage

Complements to 2SD1767

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-80

V

VCEO

Collector-Emitter Voltage

-80

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-0.7

A

PC

Collector Power Dissipation

0.5

W

Operation Junction and

Storage Temperature Range

TJ,Tstg

-55~150

℃

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO IC=-50μA,IE=0

-80

V

Collector-emitter breakdown voltage

V(BR)CEO IC=-2mA,IB=0

-80

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-50μA,IC=0

-5

V

Collector cut-off current

ICBO

VCB=-50V,IE=0

-0.5

μA

Emitter cut-off current

IEBO

VEB=-4V,IC=0

-0.5

μA

DC current gain

hFE

VCE=-3V,IC=-100mA

82

390

Collector-emitter saturation voltage

VCE(sat)

IC=-500mA,IB=-50mA

-0.4

V

Transition frequency

fT

VCE=-10V,IC=-50mA,f=100MHz

100

MHz

Collector output capacitance

Cob

VCB=-10V,IE=0,f=1MHz

20

pF

CLASSIFICATION OF hFE

Rank

P

Q

R

Range

82-180

120-270

180-390

SOT-89-3L

1. BASE

2. COLLECTOR

3. EMITTER

1

2

3

MARKING

BDP

BDQ

BDR

82-180

120-270

180-390

SOT-89-3L Plastic-Encapsulate Transistors

DONGGUAN NANJING ELECTRONICS LTD.,

Dongguan Nanjing Electronics Ltd.

1/4

www.dgnjdz.com

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