2SC554 datasheet(1/4 Pages) DGNJDZ

Teilenummer	2SC554

Bauteilbeschribung	SOT-89-3L Plastic-Encapsulate Transistors

PDF	4 Pages

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Hersteller	DGNJDZ [Nanjing International Group Co]

Direct Link	http://www.dgnjdz.com/

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1 / 4 page

SOT-89-3L

1. BASE

2. COLLECTOR

3. EMITTER

2SC554

TRANSISTOR (NPN)

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

T est conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=0.1mA,IE=0

100

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA,IB=0

100

V

Emitter-base breakdown voltage

V(BR)EBO

IE=0.1mA,IC=0

6

V

Collector cut-off current

ICBO

VCB=100V,IE=0

1

µA

Emitter cut-off current

IEBO

VEB=4V,IC=0

1

µA

DC current gain

hFE

VCE=3V, IC=100mA

82

270

Collector-emitter saturation voltage

VCE(sat)

IC=500mA,IB=25mA

0.2

V

Transition frequency

fT

VCE=5V,IC=100mA

30

MHz

Collector output capacitance

Cob

VCB=10V, IE=0, f=1MHz

16

pF

Symbol Para

meter

Value

Unit

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current

2

A

PC

Collector Power Dissipation

500

mW

RθJA

Thermal Resistance From Junction To Ambient

250

℃/W

TJ,Tstg

Operation Junction and

Storage Temperature Range

-55 ~ +150

℃

FEATURES

Low Saturation Voltage

High Speed Switching

MARKING: C554

C=1A,IB=50mA

0.3

V

I

Equivalent Circuit

C554

SOT-89-3L Plastic-Encapsulate Transistors

DONGGUAN NANJING ELECTRONICS LTD.,

Dongguan Nanjing Electronics Ltd.

1/4

www.dgnjdz.com

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2SC554 Datenblatt(PDF) 1 Page - Nanjing International Group Co

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