| Datenblatt-Suchmaschine für elektronische Bauteile |
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PTVA101K02EV Datenblatt(PDF) 2 Page - WOLFSPEED, INC. |
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PTVA101K02EV Datenblatt(HTML) 2 Page - WOLFSPEED, INC. |
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2 / 9 page ![]() 2 PTVA101K02EV Rev. 04, 2023-07-07 © 2023 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. The information in this document is subject to change without notice. 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 RF Characteristics Typical RF Performance (not subject to production test, verified by design/characterization in Wolfspeed test fixture) VDD = 50 V, IDQ = 75 mA per side, Input signal (tr = 5 ns, tf = 6.5 ns), TCASE = 25°C, class AB test P1dB P3dB Mode of operation ƒ IRL Gain Eff POUT Gain Eff POUT Pdroop(pulse) tr tf (MHz) (dB) (dB) (%) (W) (dB) (%) (W) dB @ 1000 W (ns) (ns) 128 µs, 10% 1030 20 18 56 980 16 57 1090 0.18 7 8 128 µs, 1% 1030 20 18.1 57 1010 16.1 58 1130 0.16 7 8 MODE-S 1030 20 17.9 54 930 14.9 55 1060 0.45 7 8 (32µS ON / 18µS OFF)X80, LTDF=6.4% 128 µs, 10% 1090 13 18.3 59 920 16.2 60 1050 0.16 7 8 128 µs, 1% 1090 14 18.4 60 950 16.4 61 1080 0.17 7 8 DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 105 — — V Drain Leakage Current VDS = 50 V, VGS = 0 V IDSS — — 1 µA VDS = 105 V, VGS = 0 V IDSS — — 10 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.1 — W Operating Gate Voltage VDS = 50 V, IDQ = 150 mA VGS 3 3.35 4 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 105 V Gate-Source Voltage VGS –6 to +12 V Operating Voltage VDD 0 to +55 V Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (TCASE = 70°C, 1000 W, MODE–S) RqJC 0.16 °C/W |
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