NCP4425P datasheet(3/12 Pages) ONSEMI

3 / 12 page

NCP4423, NCP4424, NCP4425

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ABSOLUTE MAXIMUM RATINGS

Rating

Value

Unit

Supply Voltage

+22

Input Voltage, IN A or IN B (VDD + 0.3 V to GND – 5.0 V)

–5

Maximum Chip Temperature

+150

°C

Storage Temperature Range, Tstg

–65 to +150

°C

Lead Temperature (Soldering, 10 sec)

+300

°C

Package Thermal Resistance

SOIC, RθJA

PDIP, RθJA

PDIP, RθJC

155

–125

–45

°C/W

Operating Temperature Range

–40 to +85

°C

Package Power Dissipation (TA v 70°C)

SOIC

PDIP

470

730

ELECTRICAL CHARACTERISTICS (TA = +25°C with 4.5 V v VDD v 18 V, unless otherwise specified.)

Characteristic

Symbol

Test Conditions

Min

Typ

Max

Unit

Input

Logic 1 High Input Voltage

VOH

–

2.4

–

Logic 0 Low Input Voltage

VIL

–

0.8

Input Current

IIN

0 V

v VIN v VDD

–1.0

–

1.0

µA

Output

High Output Voltage

VOH

–

VDD –0.025

–

Low Output Voltage

VOL

–

0.025

Output Resistance, High

ROH

IOUT = 10 mA,

VDD = 18 V

–

2.8

5.0

Ω

Output Resistance, Low

ROL

IOUT = 10 mA,

VDD = 18 V

–

3.5

5.0

Ω

Peak Output Current

IPK

–

3.0

–

Latch–Up Protection

Withstand Reverse Current

IREV

Duty Cycle

v 2%

v 300 µs

1.5

–

Switching Time (Note 1.)

Rise Time

Figure 1, CL = 1800 pF

–

nsec

Fall Time

Figure 1, CL = 1800 pF

–

nsec

Delay Time 1

tD1

Figure 1, CL = 1800 pF

–

nsec

Delay Time 2

tD2

Figure 1, CL = 1800 pF

–

nsec

Power Supply

Power Supply Current

VIN = 3.0 V (Both Inputs)

VIN = 0 V (Both Inputs)

–

1.5

0.15

2.5

0.25

1. Switching times guaranteed by design.

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