Central

Semiconductor Corp.

TM

CMPD2003

CMPD2004

CMPD2003C

CMPD2004A

CMPD2003S

CMPD2004C

CMPD2004S

SURFACE MOUNT

HIGH VOLTAGE

SILICON SWITCHING DIODE

R7 (6-August 2003)

ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)

CMPD2004

CMPD2003

CMPD2004A

CMPD2003C

CMPD2004C

CMPD2003S

CMPD2004S

SYMBOL

TEST CONDITIONS

MIN MAX

MIN MAX

UNITS

BVR

IR=100µA

250

300

V

IR

VR=200V

100

-

nA

IR

VR=200V, TA=150°C

100

-

µA

IR

VR=240V

-

100

nA

IR

VR=240V, TA=150°C

-

100

µA

VF

IF=100mA

1.0

1.0

V

VF

IF=200mA

1.25

-

V

CT

VR=0V, f=1.0 MHz

5.0

5.0

pF

trr

IR=IF=30mA, RL=100Ω, Rec. to 3.0mA

50

50

ns

SOT-23 CASE - MECHANICAL OUTLINE

MARKING CODE:

SEE PREVIOUS PAGE

CMPD2003

CMPD2003C

CMPD2003S

CMPD2004

CMPD2004A

CMPD2004C

CMPD2004S

1) Anode

1) Cathode D2

1) Anode D2

1) Anode D2

2) No Connection

2) Cathode D1

2) Anode D1

2) Cathode D1

3) Cathode

3) Anode D1, Anode D2

3) Cathode D1, Cathode D2

3) Anode D1, Cathode D2

2

3

1

D1

D2

2

3

1

D1

D2

2

3

1

D1

D2

2

3

1

LEAD CODE:

LEAD CODE:

LEAD CODE:

LEAD CODE: