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NAND02G-B2C Datenblatt(PDF) 40 Page - STMicroelectronics |
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NAND02G-B2C Datenblatt(HTML) 40 Page - STMicroelectronics |
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40 / 62 page ![]() Program and Erase Times and Endurance cycles NAND01G-B2B, NAND02G-B2C 40/62 9 Program and Erase Times and Endurance cycles The Program and Erase times and the number of Program/ Erase cycles per block are shown in Table 18. Table 18. Program, Erase Times and Program Erase Endurance Cycles Parameters NAND Flash Unit Min Typ Max Page Program Time 200 700 µs Block Erase Time 2 3ms Program/Erase Cycles (per block) 100,000 cycles Data Retention 10 years |
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