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BUJ103AX Datenblatt(PDF) 3 Page - NXP Semiconductors

Teilenummer BUJ103AX
Bauteilbeschribung  Silicon Diffused Power Transistor
PDF  12 Pages
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Hersteller  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BUJ103AX Datenblatt(HTML) 3 Page - NXP Semiconductors

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August 1998
2
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ103AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
R.M.S. isolation voltage from all
f = 50-60 Hz; sinusoidal
-
2500
V
three terminals to external
waveform;
heatsink
R.H.
≤ 65% ; clean and dustfree
C
isol
Capacitance from T2 to external f = 1 MHz
-
10
-
pF
heatsink
STATIC CHARACTERISTICS
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
1
V
BE = 0 V; VCE = VCESMmax
-
-
1.0
mA
I
CES
V
BE = 0 V; VCE = VCESMmax;
-
-
2.0
mA
T
j = 125 ˚C
I
CBO
Collector cut-off current
1
V
CBO = VCESMmax(700V)
-
-
0.1
mA
I
CEO
V
CEO = VCEOMmax(400V)
-
-
0.1
mA
I
EBO
Emitter cut-off current
V
EB = 7 V; IC = 0 A
-
-
0.1
mA
V
CEOsust
Collector-emitter sustaining voltage
I
B = 0 A; IC = 10 mA;
400
-
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltage
I
C = 3.0 A; IB = 0.6 A
-
0.25
1.0
V
V
BEsat
Base-emitter saturation voltage
I
C = 3.0 A; IB = 0.6 A
-
0.97
1.5
V
h
FE
DC current gain
I
C = 1 mA; VCE = 5 V
10
17
32
h
FE
I
C = 0.5 A; VCE = 5 V
12
20
32
h
FEsat
DC current gain
I
C = 2 A; VCE = 5 V
13.5
16
20
I
C = 3 A; VCE = 5 V
-
12.5
-
DYNAMIC CHARACTERISTICS
T
hs = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (resistive load)
I
Con = 2.5 A; IBon = -IBoff = 0.5 A;
R
L = 75 ohms; VBB2 = 4 V;
t
on
Turn-on time
0.52
0.6
µs
t
s
Turn-off storage time
2.7
3.2
µs
t
f
Turn-off fall time
0.3
0.43
µs
Switching times (inductive load)
I
Con = 2 A; IBon = 0.4 A; LB = 1 µH;
-V
BB = 5 V
t
s
Turn-off storage time
1.2
1.33
µs
t
f
Turn-off fall time
33
80
ns
Switching times (inductive load)
I
Con = 2 A; IBon = 0.4 A; LB = 1 µH;
-V
BB = 5 V; Tj = 100 ˚C
t
s
Turn-off storage time
-
1.8
µs
t
f
Turn-off fall time
-
200
ns
1 Measured with half sine-wave voltage (curve tracer).



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